SEMICONDUCTOR DEVICE

A semiconductor device is provided with a semiconductor layer including Si and a Schottky electrode being in Schottky contact with at least a part of one of main surfaces of the semiconductor layer. A material of the Schottky electrode is a Al-Si alloy including at least one metal selected from the...

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Bibliographic Details
Main Authors YAMASHITA YUSUKE, ONISHI TORU, YAMADERA HIDEYA, MACHIDA SATORU, ITO TAKAHIRO
Format Patent
LanguageEnglish
Published 25.11.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is provided with a semiconductor layer including Si and a Schottky electrode being in Schottky contact with at least a part of one of main surfaces of the semiconductor layer. A material of the Schottky electrode is a Al-Si alloy including at least one metal selected from the group consisting of Ti, Ta, Nb, Hf, Zr, W, Mo and V.
Bibliography:Application Number: CN20151232850