Magnetic stack including TiN-X intermediate layer

A magnetic stack includes a substrate, a magnetic recording layer, and a TiN-X layer disposed between the substrate and the magnetic recording layer. In the TiN-X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, A1N, and Al2O3.

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Bibliographic Details
Main Authors JU GANPING, PENG YINGGUO, LI HUIHUI, CHEN JINGSHENG
Format Patent
LanguageEnglish
Published 04.11.2015
Subjects
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
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Summary:A magnetic stack includes a substrate, a magnetic recording layer, and a TiN-X layer disposed between the substrate and the magnetic recording layer. In the TiN-X layer, X is a dopant comprising at least one of MgO, TiO, TiO2, ZrN, ZrO, ZrO2, HfN, HfO, A1N, and Al2O3.
Bibliography:Application Number: CN201380060675