Infrared sensor and infrared sensor chip

An infrared sensor (101) comprises: a semiconductor substrate having a recess in an upper surface; an upper-part surface having a sensor opening part (3) that is opened so as to correspond to the recess, the upper-part surface being formed on the upper side of the semiconductor substrate; and a sens...

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Bibliographic Details
Main Authors KAWAI KAZUYA, SHIOZAKI MASAYOSHI, NAKADA HIRONORI, TANAKA JUNICHI, AITA FUMIJI
Format Patent
LanguageEnglish
Published 28.10.2015
Subjects
COLORIMETRY
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
TESTING
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Summary:An infrared sensor (101) comprises: a semiconductor substrate having a recess in an upper surface; an upper-part surface having a sensor opening part (3) that is opened so as to correspond to the recess, the upper-part surface being formed on the upper side of the semiconductor substrate; and a sensor part (2) that transverses the second opening part (3) in an S shape while set at a distance from the inner surface of the recess so as to connect the space between a first location (61) and a second location (62) of the inner periphery of the sensor opening part (3). The sensor part (2) is sealed in a vacuum. A center part (4) of the sensor part (2) is disposed so as to be capable of receiving infrared light from an observed object. The sensor part (2) is provided with a thermoelectric conversion structure for converting a temperature difference between the center part (4) and the first location (61) and second location (62) into an electric signal.
Bibliography:Application Number: CN201480009824