Preparation method of polycrystalline silicon film with high crystallization rate

• Main Authors: WANG ZHOU, LUO XULIANG, FU CHUANQI, YONG FAN, DONG GUIFU
• Format: Patent
• Language: English
• Published: 14.10.2015
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention provides a preparation method of a polycrystalline silicon film with a high crystallization rate. The method is characterized by selecting polycrystalline silicon powder and phosphorus powder as raw materials, using a graphite sheet as an evaporation source and a k9 glass sheet as a baseplate, putting the raw materials, the evaporation source and the pretreated baseplate in a vacuum coating machine to be evaporated and setting the distances between the baseplate and the raw materials to be 130-150cm and the temperature of the baseplate to be 100-300 DEG C; putting a sample obtained after evaporation in a vacuum annealing furnace to be annealed at 550 DEG C for two hours and corroding the surface of the obtained sample with an aluminium standard corrosion solution, thus obtaining the polycrystalline silicon film. The polycrystalline silicon film has the characteristics that the polycrystalline silicon film has high flatness and good grain size uniformity and has a crystallization rate as high as 94.95%; the needed raw materials are cheap and are richly reserved; the prepared alloy film has good mechanical properties, is simple in preparation process and is easy to produce industrially.