Monocrystalline silicon etching method and etching solution

• Main Authors: YAO MINGQIU, XI SHIWEI, TANG BIN, YANG JIE
• Format: Patent
• Language: English
• Published: 07.10.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

The invention provides a monocrystalline silicon etching method and an etching solution. The etching method comprises steps: a layer of silicon oxide firstly grows on the surface of a monocrystalline silicon wafer in a thermal oxidation method; a to-be-etched pattern is then formed on the surface of the monocrystalline silicon wafer in a photoetching method; silicon oxide on the surface of the to-be-etched pattern on the monocrystalline silicon wafer are corroded clearly; and the monocrystalline silicon wafer is immersed in a monocrystalline silicon etching solution after heating to complete etching. The etching solution is a compound comprising tetramethylammonium hydroxide, Triton X-100, isopropanol and water. The etched object is monocrystalline silicon (100). According to the monocrystalline silicon etching solution and the etching method of the invention, the depth ratio of convex side etching to etching can reach 0.39, and etching surface roughness is 1.27nm. Through adjusting the content of each component of the etching solution of the invention, etching morphology can be effectively controlled, and processing of a high-precision micro structure is realized. The monocrystalline silicon etching solution is compatible with CMOS, the etching depth can be precisely controlled, toxicity is low, and pollution is low.