Memory cell and manufacturing method thereof

The invention discloses a memory cell and a manufacturing method thereof. The memory cell comprises a substrate, a grid dielectric layer, a pattern substance layer, a selection grid and a control grid electrode, wherein the grid dielectric layer is arranged on the substrate, the pattern substance la...

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Bibliographic Details
Main Authors ZHANG YUANXIANG, ZHANG ZHIQIAN, TA WEI, CHEN ZHEN, WANG XIANDE, QIU YISHAN, YANG JIANJUN
Format Patent
LanguageEnglish
Published 30.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a memory cell and a manufacturing method thereof. The memory cell comprises a substrate, a grid dielectric layer, a pattern substance layer, a selection grid and a control grid electrode, wherein the grid dielectric layer is arranged on the substrate, the pattern substance layer is arranged on the substrate and comprises a horizontal portion and a vertical portion, the selection grid is arranged on the substrate and positioned on the vertical portion side, the control grid is arranged on the horizontal portion and positioned on the other side of the vertical portion, and the vertical portion of the pattern substance layer protrudes out of the top of the selection grid. The invention further provides another implementation means of the memory cell and the manufacturing method thereof.
Bibliography:Application Number: CN201410119334