Preparation method of high-manganese alloy film Mn53Ni23Ga24
The invention provides a preparation method of a high-manganese alloy film Mn53Ni23Ga24. The preparation method comprises the following steps: taking metal simple substances, namely Mn, Ni and Ga as target raw materials with the mole fraction ratio of Mn to Ni to Ga being 53:23:24, placing the targe...
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Main Author | |
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Format | Patent |
Language | English |
Published |
30.09.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides a preparation method of a high-manganese alloy film Mn53Ni23Ga24. The preparation method comprises the following steps: taking metal simple substances, namely Mn, Ni and Ga as target raw materials with the mole fraction ratio of Mn to Ni to Ga being 53:23:24, placing the target raw materials in a non-consumable vacuum arc furnace for smelting, vacuumizing to 5*10<-3>Pa, and then introducing shielding gas, so as to obtain a round target material; placing a pre-processed base plate and the target material in a vacuum system, and vacuumizing to 1.0*10<-4>Pa, wherein the temperature of the base plate is 500-700 DEG C, and the interval between the base plate and the target material is 3-5 cm; emitting lasers by a laser device, controlling the frequency to be 3-4 Hz, and sputtering for 1-3 hours, so as to prepare a film with required thickness; finally, annealing the film at the temperature of 800-900 DEG C, so as to obtain the high-manganese alloy film Mn53Ni23Ga24. According to the Mn53Ni23Ga24 alloy film prepared by the preparation method, the components are more precise, the roughness is low, the surface is smoother, the anisotropism is good, the martensite phase transformation temperature of the film is equivalent to that of block materials, required raw materials are low in price and rich in reserves, and the prepared alloy film is excellent in tenacity, high in strength, simple in technology, and easy for industrial production. |
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Bibliography: | Application Number: CN20151447634 |