Method for preparing Ni52Mn24Ga24 alloy film through laser pulse sputtering deposition
The invention relates to a method for preparing a Ni52Mn24Ga24 alloy film through laser pulse sputtering deposition. The method comprises the following steps: respectively placing metal simple substances Ni, Mn and Ga in a vacuum nonconsumable electrode electric arc furnace for smelting according to...
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Main Author | |
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Format | Patent |
Language | English |
Published |
30.09.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The invention relates to a method for preparing a Ni52Mn24Ga24 alloy film through laser pulse sputtering deposition. The method comprises the following steps: respectively placing metal simple substances Ni, Mn and Ga in a vacuum nonconsumable electrode electric arc furnace for smelting according to the mole ratio of 52:24:24; vacuumizing the interior of the electric arc furnace to 5*10<-3> Pa, and introducing inert gas for protection so as to obtain a round target material; placing a treated glass substrate and the target material in a vacuum system, and vacuumizing to 1*10<-4> Pa, wherein the temperature of the glass substrate is 550-600 DEG C and the distance between the glass substrate and the target material is 3-5 cm; emitting laser through a laser, wherein the frequency is 3-6 Hz, and the sputtering time is 40-170 minutes; finally, annealing for 0.5-3 h at 800-850 DEG C so as to prepare the Ni52Mn24Ga24 alloy film. The prepared Ni52Mn24Ga24 alloy film is more accurate in component, low in roughness, smoother in surface, high in anisotropy, good in toughness, high in strength, simple in preparation process, and easy for industrial production and has an important practical value for micro intelligence and high integration. |
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Bibliography: | Application Number: CN20151445600 |