POWER AMPLIFICATION MODULE

The invention provides a power amplification module which can be driven by a low voltage and has an improved temperature characteristic. The power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a...

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Bibliographic Details
Main Authors SHIMAMOTO, KENICHI, MATSUOKA, TADASHI, TANAKA SATOSHI
Format Patent
LanguageEnglish
Published 23.09.2015
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Summary:The invention provides a power amplification module which can be driven by a low voltage and has an improved temperature characteristic. The power amplification module includes a first transistor which amplifies and outputs a radio frequency signal input to its base; a current source which outputs a control current; a second transistor connected to an output of the current source, a first current from the control current input to its collector, a control voltage generation circuit connected to the output and which generates a control voltage according to a second current from the control current; a first FET, the drain being supplied with a supply voltage, the source being connected to the base of the first transistor, and the gate being supplied with the control voltage; and a second FET, the drain being supplied with the supply voltage, the source being connected to the base of the second transistor, and the gate being supplied with the control voltage.
Bibliography:Application Number: CN201510121357