NOR flash memory and manufacture method thereof

The invention discloses an NOR flash memory and a manufacture method thereof. The NOR flash memory includes a storage unit arranged on a substrate. The storage unit includes a stacking gate structure, an auxiliary gate electrode, an auxiliary gate electrode dielectric layer, a light doping zone and...

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Bibliographic Details
Main Authors NAGAI YUKIHIRO, CHEN HUI-HUANG, CHEN CHING-HUA
Format Patent
LanguageEnglish
Published 23.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses an NOR flash memory and a manufacture method thereof. The NOR flash memory includes a storage unit arranged on a substrate. The storage unit includes a stacking gate structure, an auxiliary gate electrode, an auxiliary gate electrode dielectric layer, a light doping zone and a drain electrode zone. The stacking gate structure is arranged on the substrate. The auxiliary gate electrode is arranged on the substrate on a first side of the stacking gate structure. The auxiliary gate electrode dielectric layer is arranged between the auxiliary gate electrode and the substrate. The light doping zone is arranged in the substrate below the auxiliary gate electrode. A reversing layer is formed in the substrate below the auxiliary gate electrode through exerting a voltage on the auxiliary gate electrode. The drain electrode zone is arranged in the substrate on the second side of the stacking gate electrode, wherein the first side is opposite to the second side.
Bibliography:Application Number: CN201410150290