SEMICONDUCTOR DEVICE

The present invention provides a semiconductor device for reducing grid electrode leakage current. The semiconductor device includes a first nitride semiconductor layer and a second nitride semiconductor layer having a band gap wider than the first nitride semiconductor layer. Source and drain elect...

Full description

Saved in:
Bibliographic Details
Main Author HIDETOSHI FUJIMOTO
Format Patent
LanguageEnglish
Published 16.09.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present invention provides a semiconductor device for reducing grid electrode leakage current. The semiconductor device includes a first nitride semiconductor layer and a second nitride semiconductor layer having a band gap wider than the first nitride semiconductor layer. Source and drain electrodes are provided on the second nitride semiconductor layer. A third nitride semiconductor layer is provided between the source electrode and the drain electrode on the second nitride semiconductor layer. The third nitride semiconductor layer has an impurity concentration of 1*1017 atoms/cm3 or less, and a band gap narrower than the second nitride semiconductor layer. A p-type fourth nitride semiconductor layer is provided on the third nitride semiconductor layer, and a gate electrode is provided on the fourth nitride semiconductor layer.
Bibliography:Application Number: CN20141305254