Non-valatile semiconductor memory device

The present invention provides a non-valatile semiconductor memory device for improving motion reliability. The non-valatile semiconductor memory device, in the embodiment scheme, includes a control portion configured to uniformly carry out deletion motion of a first storage unit to a fourth storage...

Full description

Saved in:
Bibliographic Details
Main Authors NAKAMURA HIROSHI, ABE KENICHI, FUTATSUYAMA TAKUYA, BABA YASUYUKI, SHIRAKAWA MASANOBU, MINAMI TOSHIFUMI, SATO ATSUHIRO, SHINOHARA HIROSHI, ONEHAMA KEISUKE
Format Patent
LanguageEnglish
Published 16.09.2015
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

Abstract The present invention provides a non-valatile semiconductor memory device for improving motion reliability. The non-valatile semiconductor memory device, in the embodiment scheme, includes a control portion configured to uniformly carry out deletion motion of a first storage unit to a fourth storage unit. When the deletion motion of the control portion is carried out, a first voltage is applied to a first word line, a second voltage higher than the first voltage is applied to a second word line, a third voltage is applied to a third word line, and a fourth voltage higher than the third voltage is applied to a fourth word line, wherein the third voltage is higher than the second voltage.
AbstractList The present invention provides a non-valatile semiconductor memory device for improving motion reliability. The non-valatile semiconductor memory device, in the embodiment scheme, includes a control portion configured to uniformly carry out deletion motion of a first storage unit to a fourth storage unit. When the deletion motion of the control portion is carried out, a first voltage is applied to a first word line, a second voltage higher than the first voltage is applied to a second word line, a third voltage is applied to a third word line, and a fourth voltage higher than the third voltage is applied to a fourth word line, wherein the third voltage is higher than the second voltage.
Author FUTATSUYAMA TAKUYA
ONEHAMA KEISUKE
SHIRAKAWA MASANOBU
ABE KENICHI
BABA YASUYUKI
SATO ATSUHIRO
MINAMI TOSHIFUMI
NAKAMURA HIROSHI
SHINOHARA HIROSHI
Author_xml – fullname: NAKAMURA HIROSHI
– fullname: ABE KENICHI
– fullname: FUTATSUYAMA TAKUYA
– fullname: BABA YASUYUKI
– fullname: SHIRAKAWA MASANOBU
– fullname: MINAMI TOSHIFUMI
– fullname: SATO ATSUHIRO
– fullname: SHINOHARA HIROSHI
– fullname: ONEHAMA KEISUKE
BookMark eNrjYmDJy89L5WTQ8MvP0y1LzEksycxJVShOzc1Mzs9LKU0uyS9SyE3NzS-qVEhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoYGJpaGZsZGBo7GxKgBANudKlM
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID CN104916320A
GroupedDBID EVB
ID FETCH-epo_espacenet_CN104916320A3
IEDL.DBID EVB
IngestDate Fri Aug 23 07:05:07 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_CN104916320A3
Notes Application Number: CN201410453781
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150916&DB=EPODOC&CC=CN&NR=104916320A
ParticipantIDs epo_espacenet_CN104916320A
PublicationCentury 2000
PublicationDate 20150916
PublicationDateYYYYMMDD 2015-09-16
PublicationDate_xml – month: 09
  year: 2015
  text: 20150916
  day: 16
PublicationDecade 2010
PublicationYear 2015
RelatedCompanies TOSHIBA KK
RelatedCompanies_xml – name: TOSHIBA KK
Score 2.9994843
Snippet The present invention provides a non-valatile semiconductor memory device for improving motion reliability. The non-valatile semiconductor memory device, in...
SourceID epo
SourceType Open Access Repository
SubjectTerms ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Title Non-valatile semiconductor memory device
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150916&DB=EPODOC&locale=&CC=CN&NR=104916320A
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_m_HzTquj8oIIUX4L2e30o4tKWIawbMmVvY01TmGg61or433sJnfNFXy9wSY5cfrnkdxeAawTloJgFNuFu5hLHzgOSIU4SVSfQw-gt92W-8yD1-s_O48SdtOB1lQuj6oR-quKI6FEM_b1W-_VifYkVKW5ldZvNUVTeJ-MwMpro2JTw5xlRL4xHw2hIDUpDmhrpk_zkFlts6-5hAzbxGO1Lb4hfejIrZfEbUpJ92BqhNlEfQIsLDXbp6uc1DXYGzYO3BtuKockqFDZeWB3CTVoKgisEx_nG9UrS20sh67aWS_1dMme_9JzLHeAIrpJ4TPsEO5_-zHRK0_U47WNoi1LwE9C7iKqWH3C7MLljcjPrBrnPHDYrLMb8Ij-Fzt96Ov81nsGetJokQJjeObTr5Qe_QJSts0tlnm-opYBf
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_m_JhvWhWdXxWk-FJcv9eHIi5tqbp2Q6bsraxtCoq2Y62I_72X0Dlf9PUCl-TI5ZdLfncBuERQtvOZrcnUSAxZ1zJbThAnZV4n0MToLbNYvnMYmcGTfj81pi14XebC8Dqhn7w4InpUiv5e8_16vrrEcjm3srpOXlBU3vgTx5Wa6Fhh8GdK7sDxxiN3RCRCHBJJ0SP75BZbNLV3uwbreMS2mDd4zwOWlTL_DSn-DmyMUVtR70KLFgJ0yPLnNQG2wubBW4BNztBMKxQ2XljtwVVUFjKuEBznGxUrRm8vC1a3tVyI74w5-yVmlO0A-3DhexMSyNh5_DPTmESrcWoH0C7Kgh6C2EdUVS2barlCdYUqSd_OrFRPZ7maplaeHUH3bz3d_xrPoRNMwmE8vIsejmGbWZCRIRTzBNr14oOeIuLWyRk31TfYuINS
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Non-valatile+semiconductor+memory+device&rft.inventor=NAKAMURA+HIROSHI&rft.inventor=ABE+KENICHI&rft.inventor=FUTATSUYAMA+TAKUYA&rft.inventor=BABA+YASUYUKI&rft.inventor=SHIRAKAWA+MASANOBU&rft.inventor=MINAMI+TOSHIFUMI&rft.inventor=SATO+ATSUHIRO&rft.inventor=SHINOHARA+HIROSHI&rft.inventor=ONEHAMA+KEISUKE&rft.date=2015-09-16&rft.externalDBID=A&rft.externalDocID=CN104916320A