Non-valatile semiconductor memory device

The present invention provides a non-valatile semiconductor memory device for improving motion reliability. The non-valatile semiconductor memory device, in the embodiment scheme, includes a control portion configured to uniformly carry out deletion motion of a first storage unit to a fourth storage...

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Main Authors NAKAMURA HIROSHI, ABE KENICHI, FUTATSUYAMA TAKUYA, BABA YASUYUKI, SHIRAKAWA MASANOBU, MINAMI TOSHIFUMI, SATO ATSUHIRO, SHINOHARA HIROSHI, ONEHAMA KEISUKE
Format Patent
LanguageEnglish
Published 16.09.2015
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The present invention provides a non-valatile semiconductor memory device for improving motion reliability. The non-valatile semiconductor memory device, in the embodiment scheme, includes a control portion configured to uniformly carry out deletion motion of a first storage unit to a fourth storage unit. When the deletion motion of the control portion is carried out, a first voltage is applied to a first word line, a second voltage higher than the first voltage is applied to a second word line, a third voltage is applied to a third word line, and a fourth voltage higher than the third voltage is applied to a fourth word line, wherein the third voltage is higher than the second voltage.
Bibliography:Application Number: CN201410453781