Single-mode high-speed modulation Fabry-Perot semiconductor laser based on coupled cavity

• Main Authors: LIU BOWEN, ZOU LINGXIU, XIAO JINLONG, YANG YUEDE, HUANG YONGZHEN, MA XIUWEN, LONG HENG
• Format: Patent
• Language: English
• Published: 26.08.2015
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

The invention discloses a single-mode high-speed modulation Fabry-Perot semiconductor laser based on a coupled cavity, and the laser comprises a tube core which is in a stacked structure and comprises a lower electrode; a lower contact layer which is disposed on the lower electrode; and an N-type substrate which is disposed on the lower contact layer. The N-type substrate is divided into two parts: a Fabry-Perot type miniature cavity and an echo-wall type miniature cavity. The Fabry-Perot type miniature cavity is disposed on the N-type substrate, wherein one end of the Fabry-Perot type miniature cavity is aligned with one end of the N-type substrate. The echo-wall type miniature cavity is disposed on the N-type substrate, and is located at the other end of the Fabry-Perot type miniature cavity. The Fabry-Perot type miniature cavity and the echo-wall type miniature cavity have the same stacked structure. According to the invention, the high-power Fabry-Perot type miniature cavity and the single-mode high-speed modulation echo-wall type miniature cavity are combined together, and the mode coupling between the two cavities is adjusted so as to adjust the equivalent reflectivity of the Fabry-Perot type miniature cavity, thereby achieving high-power, single-mode lasing and better high-speed modulation characteristics.