Method for producing polished article

• Main Authors: NAGAE TOMOKI, KITAMURA KAZUMASA
• Format: Patent
• Language: English
• Published: 05.08.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; PERFORMING OPERATIONS; POLISHING; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A grinding device (10) is provided with: a controller (11) that controls the entire device; a grinding motor (14); a base (15) that is rotated by the grinding motor (14); and a grinding stone (16) affixed to the base (15). In a grinding step, the grinding device (10) is used to grind the surface (19) of an article (18) to be polished by means of the grinding stone (16) rotated at a circumferential speed of no greater than 10 m/s. In the grinding step, the surface (19) of the article (18) to be polished is preferably ground by means of the grinding stone (16) rotated at a circumferential speed of at least 0.5 m/s. In the grinding step, the surfaces of alumina, sapphire, silicon carbide, and gallium nitride are ground as the articles to be polished. Also, a lapping step for polishing the post-grinding article to be polished by means of abrasive grit is preferably included.