Method for forming isolation structure

• Main Authors: GUO SHIBI, DONG JIEQIONG, ZHANG QINGYONG, ZHOU KAN, ZHOU RULING
• Format: Patent
• Language: English
• Published: 22.07.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a method for forming an isolation structure, which comprises the steps of providing a semiconductor substrate; forming a trench in the semiconductor substrate; depositing an insulating material into the trench by adopting a first deposition technology, wherein the first deposition technology is that the deposition rate is increased from a first deposition rate to a second deposition rate along with the passage of the time; continuously depositing the insulating material into the trench by adopting a second deposition technology until the trench is fully filled, wherein the second deposition technology is that the deposition rate is increased from a third deposition rate to a fourth deposition rate along with the passage of the time. The method for forming the isolation structure can realize filling without pores or damages and forms a high-quality isolation structure. In addition, the production efficiency is improved at the same time.