Method for improving time storage efficiency of ONO structure in SONOS flash memory

Provided is a method for improving the time storage efficiency of an ONO structure in an SONOS flash memory. When a silicon oxy-nitride layer is generated, the ratio of nitrous oxide to ammonia is controlled to enable main distribution of Si-H bonds to migrate from the interface of a tunnel oxide la...

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Bibliographic Details
Main Authors ZHANG LINGYUE, ZHANG MENG, GUAN BAOHUI
Format Patent
LanguageEnglish
Published 15.07.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a method for improving the time storage efficiency of an ONO structure in an SONOS flash memory. When a silicon oxy-nitride layer is generated, the ratio of nitrous oxide to ammonia is controlled to enable main distribution of Si-H bonds to migrate from the interface of a tunnel oxide layer and the silicon oxy-nitride layer to the interface of the silicon oxy-nitride layer and a high-temperature oxide (HTO) layer. As the HTO layer is much thicker than the tunnel oxide layer, the possibility that electrons stored in the silicon oxy-nitride layer escape through the tunnel oxide layer is reduced, the time storage efficiency of an ONO layer is improved, and the yield rate and the reliability of the SONOS flash memory are improved.
Bibliography:Application Number: CN201410013081