Mems fixed capacitor comprising a gas-containing gap and process for manufacturing said capacitor

The MEMS fixed capacitor (1) comprises a bottom metal electrode (3) formed onto a substrate (S), a top metal electrode (2) supported by metal pillars (5) above the bottom metal electrode, and a gas-containing gap (4) forming a non-solid dielectric layer between said top (2) and bottom (3) metal elec...

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Bibliographic Details
Main Author PAVAGEAU CHRISTOPHE
Format Patent
LanguageEnglish
Published 01.07.2015
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Summary:The MEMS fixed capacitor (1) comprises a bottom metal electrode (3) formed onto a substrate (S), a top metal electrode (2) supported by metal pillars (5) above the bottom metal electrode, and a gas-containing gap (4) forming a non-solid dielectric layer between said top (2) and bottom (3) metal electrodes; the distance (D) between the top (2) and bottom (3) metal electrodes is not more than 1[mu]m and the thickness (E) of the top metal electrode (2) is not less than 1 [mu]m.
Bibliography:Application Number: CN201380056250