Mems fixed capacitor comprising a gas-containing gap and process for manufacturing said capacitor
The MEMS fixed capacitor (1) comprises a bottom metal electrode (3) formed onto a substrate (S), a top metal electrode (2) supported by metal pillars (5) above the bottom metal electrode, and a gas-containing gap (4) forming a non-solid dielectric layer between said top (2) and bottom (3) metal elec...
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Main Author | |
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Format | Patent |
Language | English |
Published |
01.07.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The MEMS fixed capacitor (1) comprises a bottom metal electrode (3) formed onto a substrate (S), a top metal electrode (2) supported by metal pillars (5) above the bottom metal electrode, and a gas-containing gap (4) forming a non-solid dielectric layer between said top (2) and bottom (3) metal electrodes; the distance (D) between the top (2) and bottom (3) metal electrodes is not more than 1[mu]m and the thickness (E) of the top metal electrode (2) is not less than 1 [mu]m. |
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Bibliography: | Application Number: CN201380056250 |