SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

A semiconductor device includes a through electrode penetrating a substrate such that a first end portion of the through electrode protrudes from a first surface of the substrate, a passivation layer covering the first surface of the substrate and a sidewall of the first end portion of the through e...

Full description

Saved in:
Bibliographic Details
Main Authors JEONG RAE-HYUNG, RYU HYUN-KYU
Format Patent
LanguageEnglish
Published 24.06.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device includes a through electrode penetrating a substrate such that a first end portion of the through electrode protrudes from a first surface of the substrate, a passivation layer covering the first surface of the substrate and a sidewall of the first end portion of the through electrode, a bump having a lower portion penetrating the passivation layer and coupled to the first end portion of the through electrode, and a lower metal layer disposed between the bump and the first end portion of the through electrode. The lower metal layer extends onto a sidewall of the bump and has a concave shape.
Bibliography:Application Number: CN201410266102