Metal interconnecting structure and forming method thereof

• Main Authors: PU XIANYONG, CHEN ZONGGAO, CHEN YIQUN, WANG GANGNING
• Format: Patent
• Language: English
• Published: 24.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a metal interconnecting structure and a forming method thereof. The forming method of the metal interconnecting structure comprises the steps that a semiconductor substrate is provided, and an active area and an isolating structure are arranged in the semiconductor substrate; a metal layer is formed on the surface of the semiconductor substrate, annealing is conducted on the metal layer, and then metal silicide layer is formed on the surface of the active area; a first mask layer is formed on the surface of the metal layer and covers a part of the active area and the part, above the isolating structure on one side of the active area, of the metal layer; the first mask layer is used as a mask, the part, not covered by the first mask layer, of the metal layer is removed, and a metal interconnecting layer connected with the metal silicide layer on the surface of the active area is formed on an isolating area; after the first mask layer is removed, a dielectric layer is formed on the semiconductor substrate and covers the metal silicide layer, the isolating structure and the interconnecting metal layer; a metal contact hole is formed in the dielectric layer and connected with the active area through the metal interconnecting layer.