Phosphorus, arsenic and antimony co-doped N-type heavily-doped Czochralski silicon single crystal and silicon epitaxial wafer thereof

• Main Authors: TIAN DAXI, CHEN HUA, ZHENG TIEBO, LIANG XINGBO, MA XIANGYANG, WANG ZHEN, LI GANG, HE YONGZENG
• Format: Patent
• Language: English
• Published: 17.06.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention discloses a phosphorus, arsenic and antimony co-doped N-type heavily-doped Czochralski silicon single crystal and a silicon epitaxial wafer thereof. The phosphorus, arsenic and antimony co-doped N-type heavily-doped Czochralski silicon single crystal takes phosphorus as the main doping element, and either or both of arsenic and antimony as auxiliary doping elements, the concentration of phosphorus is larger than or equal to 4.6*10 /cm , phosphorus accounts for more than or equal to 60% of the doping elements, and the auxiliary doping elements accounts for 0.1-40% of the doping elements. The phosphorus, arsenic and antimony co-doped N-type heavily-doped Czochralski silicon single crystal can eliminate or remarkably reduce slip lines caused by lattice mismatching in the silicon epitaxial wafer, and can effectively reduce or eliminate mismatched dislocation lines generated when an epitaxial layer is grown on a polished wafer formed by processing of the N-type heavily-doped Czochralski silicon single crystal with high doping concentration; while the problems are solved, widening of a transition zone in a semi-conductor device after a high-temperature process is prevented; the industry practice that two or more of phosphorus, arsenic and antimony in a silicon single crystal cannot serve as dopants at the same time is changed.