Silicon carbide embedded electrode planar photoconductive switch and manufacture method thereof

• Main Authors: ZHANG YUMING, GUO HUI, SONG CHAOYANG, LIANG JIABO, JIANG SHUQING
• Format: Patent
• Language: English
• Published: 03.06.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a silicon carbide embedded electrode planar photoconductive switch and a manufacture method thereof, and mainly solves the problem in the prior art that the existing planar photoconductive switch is lower in withstand voltage under the same electrode span. The photoconductive switch comprises a semi-insulating silicon carbide substrate (1), a compact insulating oxidation layer (2) and an SiO2 passivation layer (3) from bottom to top, wherein two grooves (6 and 7) with the depths being 2 to 5 micrometers are formed in the two ends of the upper part of the semi-insulating silicon carbide substrate (1) and corresponding positions of the compact insulating oxidation layer (2) and the SiO2 passivation layer (3) in the upper layer of the surface of the semi-insulating silicon carbide substrate (1); a pair of ohmic contact electrodes (4 and 5) with the thickness being 3-7 micrometers is embedded into the two grooves (6 and 7). The silicon carbide embedded electrode planar photoconductive switch is smaller in on resistance and higher in voltage resistance property in the condition of the same breakdown voltage, ensures that the size can be further reduced, and can be applied to high-speed and high-power pulse system.