Pressure sensor made from nanogauges coupled to a resonator

A pressure sensor made from a semiconductor material, comprising a casing (1) defining a secondary vacuum housing (2), at least one resonator (3) accommodated in the housing and suspended by flexible beams (4) from at least one elastically deformable membrane (3) closing the housing which also conta...

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Bibliographic Details
Main Authors RIOU JEANRISTOPHE, LEHEE GUILLAUME
Format Patent
LanguageEnglish
Published 27.05.2015
Subjects
MEASURING
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE
PHYSICS
TESTING
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Summary:A pressure sensor made from a semiconductor material, comprising a casing (1) defining a secondary vacuum housing (2), at least one resonator (3) accommodated in the housing and suspended by flexible beams (4) from at least one elastically deformable membrane (3) closing the housing which also contains excitation means (7 and 12) of the resonator to cause the resonator to vibrate and means for detecting a vibration frequency of the resonator. The detection means comprise at least a first suspended piezoresistive stress gauge (9) having one end secured to one of the beams and one end secured to the membrane. The resonator and the first stress gauge are arranged to form doped areas that have substantially identical natures and concentrations.
Bibliography:Application Number: CN201380050348