Potassium-doped phenanthrene molecular crystal and preparation method thereof

• Main Authors: WANG RENSHU, WU XIAOLIN, HUANG ZHONGBING, GAO YUN, YAN XUNWANG
• Format: Patent
• Language: English
• Published: 27.05.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a potassium-doped phenanthrene molecular crystal and a preparation method thereof. In the first aspect, the preparation method comprises the following steps: annealing under high-vacuum, anhydrous and anaerobic conditions, and controlling the annealing temperature and cooling rate to ensure that potassium atoms can be effectively doped into phenanthrene molecular crystal layers and among the phenanthrene molecular crystal layers, the c-axis length of a phenanthrene molecular crystal can be increased, and a high-quality crystal material with very good [001] oriented growth can be obtained; in the second aspect, the production of impurities such as potassium hydride can be effectively inhibited by controlling the annealing temperature and cooling rate, the high-purity potassium-doped phenanthrene molecular crystal can be obtained, and superconducting fractions of materials can be increased; and in the third aspect, the potassium atoms can be synchronously doped into the phenanthrene molecular crystal layers and among the phenanthrene molecular crystal layers so as to ensure that phenanthrene can be transformed into a stable metal state from a semiconductor state, and the superconduction critical temperature can be increased.