ULTRA HIGH VOLTAGE ELECTROSTATIC DISCHARGE PROTECTION DEVICE WITH CURRENT GAIN

• Main Authors: HSINIH CHIANG, MING-TA LEI, TUNG-YANG LIN, RUEY-HSIN LIU
• Format: Patent
• Language: English
• Published: 20.05.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides an ultra high voltage electrostatic discharge protection device with a current gain. A semiconductor device configured to provide increased current gain comprises a semiconductor substrate having a first conductivity type. The device also comprises a first semiconductor region having a second conductivity type. The device further comprises a second semiconductor region in the first semiconductor region to having the first conductivity type. The device additionally comprises a third semiconductor region in the first semiconductor region having the second conductivity type. The device also comprises a fourth semiconductor region outside the first semiconductor region having the first conductivity type. The device further comprises a fifth semiconductor region outside the first semiconductor region adjacent the fourth semiconductor region and having the second conductivity type. The device additionally comprises a first electrode electrically connected to the third semiconductor region. The device further comprises a second electrode electrically connected to the fourth semiconductor region and to the fifth semiconductor region.