Endpoint detection for photomask etching

Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber (10; 900;2500) with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced proce...

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Bibliographic Details
Main Author GRIMBERGEN MICHAEL
Format Patent
LanguageEnglish
Published 13.05.2015
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber (10; 900;2500) with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.
Bibliography:Application Number: CN201510024454