MEMORY CELL COMPRISING NON-SELF-ALIGNED HORIZONTAL AND VERTICAL CONTROL GATES

The present disclosure relates to a memory cell comprising non-self-aligned horizontal and vertical control gates. The memory cell comprises a vertical selection gate extending in a trench made in a substrate, a floating gate extending above the substrate, and a horizontal control gate extending abo...

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Bibliographic Details
Main Authors STEPHAN NIEL, JULIEN DELALLEAU, ARNAUD REGNIER, FRANCESCO LA ROSA
Format Patent
LanguageEnglish
Published 06.05.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure relates to a memory cell comprising non-self-aligned horizontal and vertical control gates. The memory cell comprises a vertical selection gate extending in a trench made in a substrate, a floating gate extending above the substrate, and a horizontal control gate extending above the floating gate, wherein the floating gate also extends above a portion of the vertical selection gate over a non-zero overlap distance. The memory unit is mainly applied to the production of a split gate memory cell programmable by hot-electron injection.
Bibliography:Application Number: CN201410598228