Method for testing self-aligning photoetching process of flash memory product

The invention provides a method for testing the self-aligning photoetching process of a flash memory product. The method comprises the steps of 1, manufacturing a test key structure by the manufacturing process of the flash memory product; 2, measuring the resistance parameter value of the test key...

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Bibliographic Details
Main Authors XIONG PENG, DENG YONGZHEN, KANG JUN
Format Patent
LanguageEnglish
Published 06.05.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a method for testing the self-aligning photoetching process of a flash memory product. The method comprises the steps of 1, manufacturing a test key structure by the manufacturing process of the flash memory product; 2, measuring the resistance parameter value of the test key structure; determining the accuracy of key dimension of a floating gate related silicon nitride layer under the self-aligning photoetching process and the aligning condition of a front mask plate and a rear mask plate of the floating gate related silicon nitride layer according to the measured resistance parameter value.
Bibliography:Application Number: CN201410844354