HOT-CARRIER INJECTION PROGRAMMABLE MEMORY AND METHOD OF PROGRAMMING SUCH A MEMORY

The disclosure relates to a hot-carrier injection programmable memory and a method of programming such a memory. The present disclosure relates to a memory comprising at least one word line (WLi) comprising a row of split gate memory cells (Ci, j) each comprising a selection transistor section compr...

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Bibliographic Details
Main Authors STEPHAN NIEL, JULIEN DELALLEAU, ARNAUD REGNIER, FRANCESCO LA ROSA
Format Patent
LanguageEnglish
Published 06.05.2015
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The disclosure relates to a hot-carrier injection programmable memory and a method of programming such a memory. The present disclosure relates to a memory comprising at least one word line (WLi) comprising a row of split gate memory cells (Ci, j) each comprising a selection transistor section comprising a selection gate (SG) and a floating-gate transistor section comprising a floating gate (FG) and a control gate (CG). According to the present disclosure, the memory comprises a source plane (SP) common to the memory cells of the word line, to collect programming currents (Ip) passing through memory cells during their programming, and the selection transistor sections of the memory cells are connected to the source plane (SP). A programming current (Ip) control circuit is configured to control the programming current (Ip) passing through the memory cells by acting on a selection voltage (VS) applied to a selection line (SL).
Bibliography:Application Number: CN201410597510