Normal pressure and normal temperature silicon dioxide CVD (chemical vapor deposition) device

• Main Authors: WANG LIKUI, DENG LIDUO, YAO BOLONG, LIU YUN
• Format: Patent
• Language: English
• Published: 06.05.2015
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention discloses a normal pressure and normal temperature silicon dioxide chemical vapor deposition (CVD) device. According to the device, silicon tetrachloride and water are respectively carried into a CVD chamber containing an object in a gaseous manner by virtue of nitrogen in a use process and perform chemical reaction in the CVD chamber to generate silicon dioxide, and therefore, a compact and thickness-controllable silicon dioxide film can be deposited on the surface of the planar or bent object and the surface of a duct with a porous structure.