Low subthreshold oscillation range and high voltage withstanding insulated gate tunneling transistor and preparing method thereof

• Main Authors: JIN XIAOSHI, LIU XI
• Format: Patent
• Language: English
• Published: 11.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a low subthreshold oscillation range and high voltage withstanding insulated gate tunneling transistor. The forward and reverse voltage withstanding capability of the device is improved by introducing a low impurity concentration of voltage withstanding layer structure into a collector junction and an emitter junction, and lower subthreshold oscillation range and better switching On-Off properties are realized through the utilization of the extremely sensitive correlation between the resistance of a tunneling insulating layer and electric field intensity in the tunneling insulating layer. Tunneling current generated on the insulated tunneling layer is used as the driving current of a collector electrode, and better forward current conducting properties are realized in contrast with a common semiconductor band gap tunneling field effect transistor. The invention further provides a specific making method of the low subthreshold oscillation range and high voltage withstanding insulated gate tunneling transistor. Therefore, the work properties of a nanoscale integrated circuit unit are obviously improved, and the transistor is suitable for being popularized and applied.