Sapphire single crystal growth PLC closed-loop control method

• Main Authors: LUO LIANGYUAN, HUANG XIAOWEI, LIU ZHUPING, WANG JIAQI, PEI GUANGQING
• Format: Patent
• Language: English
• Published: 11.03.2015
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a sapphire single crystal growth PLC (Programmable Logic Control) closed-loop control method and is characterized in that a weighing sensor, a temperature sensor, a water flow sensor, a water pressure transmitter and a human-machine operating system are mounted on a sapphire growth furnace, crystal growth curve parameters and PID (Proportion Integration Differentiation) parameters are led into the operating system, and the operating system compares crystal growth curves and regulates output power, the temperature of each node and water flow according to crystal actual weight measured by the automatically reading weighing sensor, so that crystals automatically grow by a known technology. The real-time comprehensive control of the automatic growth of large-sized and high-quality sapphire single crystals can be realized by the sapphire single crystal growth PLC closed-loop control method, the control precision is high, and the stability is great.