Silicon hardmask layer for directed self-assembly
Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly bl...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
25.02.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Compositions for directed self-assembly patterning techniques are provided which avoid the need for separate anti-reflective coatings and brush neutral layers in the process. Methods for directed self-assembly are also provided in which a self-assembling material, such as a directed self-assembly block copolymer, can be applied directly to the silicon hardmask neutral layer and then self-assembled to form the desired pattern. Directed self-assembly patterned structures are also disclosed herein. |
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Bibliography: | Application Number: CN201380031543 |