Metal finger capacitors with hybrid metal finger orientations in stack with unidirectional metal layers

A semiconductor die (104; 118) having a plurality of metal layers (106; 108; 110; 112; 114; 116; 120; 122; 124; 126; 128; 130), including a set of metal layers having a preferred direction for minimum feature size (112; 114; 116; 126; 128; 130). The set of metal layers are such that adjacent metal l...

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Bibliographic Details
Main Authors CHIDAMBARAM PR, CHOI JIHONG, GE LIXIN, YANG BIN, ZHU JOHN J
Format Patent
LanguageEnglish
Published 18.02.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor die (104; 118) having a plurality of metal layers (106; 108; 110; 112; 114; 116; 120; 122; 124; 126; 128; 130), including a set of metal layers having a preferred direction for minimum feature size (112; 114; 116; 126; 128; 130). The set of metal layers are such that adjacent metal layers have preferred directions orthogonal to one another. Finger capacitors (204; 304) formed in the set of metal layers are such that a finger capacitor formed in one metal layer has a finger direction parallel to the preferred direction of that metal layer. In bidirectional metal layers (106; 108; 110; 120; 122; 124), capacitor fingers may be in either direction.
Bibliography:Application Number: CN201380028493