Semiconductor laser unit
The invention relates to a semiconductor laser unit which comprises a substrate. A cathode is arranged above the substrate, insulators are respectively arranged at two ends of the cathode, a grid is arranged on each insulator, an emitting electrode is arranged at the position of the center above the...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
18.02.2015
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The invention relates to a semiconductor laser unit which comprises a substrate. A cathode is arranged above the substrate, insulators are respectively arranged at two ends of the cathode, a grid is arranged on each insulator, an emitting electrode is arranged at the position of the center above the cathode between the grids, an electron emission pointed cones are respectively arranged between the emitting electrode and the grids, a phosphor coating is arranged above the emitting electrode, a glass plate is arranged above the phosphor coating, and the glass plate, the substrate and side plates form an enclosed structure. The semiconductor laser unit is simple in structure, low in manufacturing cost, high in emission rate and even in brightness. |
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| Bibliography: | Application Number: CN20141521502 |