Semiconductor switching device separated by device isolation

Disclosed is a semiconductor switching device separated by device isolation. A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the...

Full description

Saved in:
Bibliographic Details
Main Authors SZU-YING CHEN, WEING HSU, TZU-HSUAN HSU, HSIAO-HUI TSENG, DUN-NIAN YAUNG, MIN-FENG KAO, JENNG LIU
Format Patent
LanguageEnglish
Published 11.02.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Disclosed is a semiconductor switching device separated by device isolation. A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure. The invention also provides a method for forming a transistor device.
Bibliography:Application Number: CN201310586650