Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
14.01.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications. |
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Bibliography: | Application Number: CN201380020210 |