Method for passivating surface of crystalline silicon solar cell

• Main Authors: GONG CUICUI, LIU ZHEN, MA XIANFANG, LU GUILIN
• Format: Patent
• Language: English
• Published: 14.01.2015
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention relates to a method for passivating the surface of a crystalline silicon solar cell. The method includes the steps of texturing, diffusing, oxidizing, edge etching, PSG removing, PECVD treatment, silk screen printing and sintering, so that the surface of the crystalline silicon solar cell is passivated. Compared with the prior art, the oxidizing technology hardly affects the quality of a silicon wafer and other technologies and is easy to match with other technologies, Voc can be improved by 4 mV-6 mV, and the absolute value of cell efficiency can be improved by 0.3-0.5%; for a monocrystalline silicon solar cell, the highest efficiency can reach 1926%.