SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with...

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Bibliographic Details
Main Authors KENNERLY STACEY JOY, LOSEE PETER ALMERN, BOLOTNIKOV ALEXANDER VIKTOROVICH
Format Patent
LanguageEnglish
Published 14.01.2015
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the implantation dose is in a range from about 2*1013 cm-2 to about 12*1013 cm-2. Semiconductor devices are also presented.
Bibliography:Application Number: CN201410476272