Magnetron sputtering cluster ion source used for flight time mass spectrum

The invention discloses a magnetron sputtering cluster ion source used for a flight time mass spectrum. The ion source comprises a cavity, an argon inlet pipe, a helium inlet pipe, a metal target material and a spraying opening. The metal target material is located on the side close to the flight ti...

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Bibliographic Details
Main Authors ZHANG SHIYU, TANG ZICHAO, QIN ZHENGBO
Format Patent
LanguageEnglish
Published 14.01.2015
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Summary:The invention discloses a magnetron sputtering cluster ion source used for a flight time mass spectrum. The ion source comprises a cavity, an argon inlet pipe, a helium inlet pipe, a metal target material and a spraying opening. The metal target material is located on the side close to the flight time mass spectrum, and the argon inlet pipe and the helium inlet pipe are arranged at the two ends of the metal target material. The side, adjacent to the flight time mass spectrum, of the cavity is provided with the spraying opening protruding towards the cavity. According to the magnetron sputtering cluster ion source, the magnetron sputtering cluster ion source is combined with the flight time mass spectrum, when a sample is tested, argon enters the cavity through the argon inlet pipe and then is ionized, ionized argon ions rapidly bombard the surface of the metal target material to generate metal plasma which is carried by helium, the metal plasma is sprayed out from the spraying opening to form cluster ions which enter the high-resolution flight time mass spectrum, and finally a detector detects the ion cluster flight time mass spectrum with a quite wide size range.
Bibliography:Application Number: CN20131291516