NONLINEAR MEMRISTORS

A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bott...

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Bibliographic Details
Main Authors ZHANG MINXIAN MAX, WILLIAMS R. STANLEY, PICKETT MATTHEW D, YANG JIANHUA
Format Patent
LanguageChinese
English
Published 31.12.2014
Subjects
ELECTRICITY
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Summary:A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.
Bibliography:Application Number: CN201280071789