Oxide sintered body and sputtering target, and method for manufacturing same

• Main Authors: TAO YUKI, KIKUYAMA HIDESHI, KANAMARU MORIYOSHI, TAKETOMI YUICHI, SAKAI KENJI, HASEYAMA SHUETSU
• Format: Patent
• Language: Chinese; English
• Published: 10.12.2014
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY; REFRACTORIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

The amounts of the impurity elements Al, Si, Zr, Ca, and Y in this Li-containing transition metal oxide sintered body are kept to the following ranges: 90 ppm or less Al, 100 ppm or less Si, 100 ppm or less Zr, 80 ppm or less Ca, and 20 ppm or less Y. The Li-containing transition metal oxide sintered body maintains a relative density of at least 95%, and a resistivity of less than 2*107 Omegacm. According to the present invention, a Li-containing transition metal oxide thin film that is useful as a positive-electrode thin film for a secondary cell or the like can be formed stably and rapidly without any irregular discharge.