Manufacturing method of TFT array substrate, TFT array substrate and display panel

The invention provides a manufacturing method of a TFT array substrate, the TFT array substrate and a display panel. In the method, a low-temperature process is adopted on a second insulating layer covering a grid electrode pattern to form a passivation layer. In the manufacturing method of the TFT...

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Bibliographic Details
Main Authors LI BINGTIAN, JIANG DONGHUA, FU YONGYI
Format Patent
LanguageChinese
English
Published 08.10.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention provides a manufacturing method of a TFT array substrate, the TFT array substrate and a display panel. In the method, a low-temperature process is adopted on a second insulating layer covering a grid electrode pattern to form a passivation layer. In the manufacturing method of the TFT array substrate, due to the fact that the passivation layer is loose, breakage due to thermal expansion and cold contraction during activation does not easily occur, and accordingly a grid electrode and a sour-drain electrode are well isolated. In addition, due to the fact that the hydrogen content of the passivation layer formed at high temperature is high compared with a passivation layer formed at low temperature, hydrogenation can be performed on a polycrystalline silicon layer in the hydrogenation process, and good electrical property stability can be obtained.
Bibliography:Application Number: CN20141298562