SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

A method for manufacturing a single-crystal 4H-SiC substrate includes: preparing a flat 4H-SiC bulk single-crystal substrate; and epitaxially growing a first single-crystal 4H-SiC layer having recesses on the 4H-SiC bulk single-crystal substrate, wherein the first single-crystal 4H-SiC layer has a t...

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Bibliographic Details
Main Authors TAKANORI TANAKA, NOBUYUKI TOMITA, KENICHI HAMANO, ZEMPEI KAWAZU, YOICHIRO MITANI, AKIHITO OHNO
Format Patent
LanguageChinese
English
Published 01.10.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a single-crystal 4H-SiC substrate includes: preparing a flat 4H-SiC bulk single-crystal substrate; and epitaxially growing a first single-crystal 4H-SiC layer having recesses on the 4H-SiC bulk single-crystal substrate, wherein the first single-crystal 4H-SiC layer has a thickness of X ([mu]m), the recesses have a diameter Y ([mu]m) no smaller than 0.2*X ([mu]m) and no larger than 2*X ([mu]m), and a depth of Z (nm) no smaller than (0.95*X ([mu]m) +0.5 (nm)) and no larger than 10*X ([mu]m).
Bibliography:Application Number: CN201410112911