Insulated gate bipolar transistor and manufacturing method

• Main Authors: CHU WEILI, TIAN XIAOLI, LU SHUOJIN, ZHU YANGJUN, HU AIBIN
• Format: Patent
• Language: Chinese; English
• Published: 27.08.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses an insulated gate bipolar transistor and its manufacturing method. The insulated gate bipolar transistor comprises a collector region, a super-junction drift region positioned on the surface of the collector region, an active region positioned on the surface of the super-junction drift region, a first terminal structure which encircles the active region and a second terminal structure which encircles the super-junction drift region and the first terminal structure. Width of the second terminal structure increases progressively in a first direction. The first direction is from the collector region to the active region. The bottom of the second terminal structure is contacted with the collector region, and the top of the second terminal structure is flush with the top of the active region. As the insulated gate bipolar transistor provided by the application is equipped with the second terminal structure which is used as a reverse pressure terminal structure of the insulated gate bipolar