Production method for semiconductor device, production device for semiconductor device, and storage medium

The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has been formed; a step for providing gas to the inside of the processing chamber from a gas providing unit, and for making the pressure in the...

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Bibliographic Details
Main Authors WADA YUICHI, SAKUMA HARUNOBU, TATENO HIDETO, AMANO TOMIHIRO, HIYAMA SHIN, ASHIHARA HIROSHI
Format Patent
LanguageChinese
English
Published 20.08.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention comprises the following steps: a step for accommodating inside of a processing chamber a substrate in which a silicon-containing film has been formed; a step for providing gas to the inside of the processing chamber from a gas providing unit, and for making the pressure in the processing chamber at least atmospheric pressure; and an oxidation step for providing a processing fluid to the substrate from a processing fluid providing unit, and for oxidizing the silicon-containing film.
Bibliography:Application Number: CN201280062552