Light-emitting diode and manufacturing method thereof

The invention discloses a light-emitting diode and a manufacturing method thereof. The light-emitting diode sequentially comprises a substrate, a buffer layer, an n-type conducting layer, a luminous zone and a p-type conducting layer; the luminous zone is of a multi-quantum well structure, wherein a...

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Bibliographic Details
Main Authors WANG DUXIANG, SHU LIMING, LIU ZHIBIN, ZHANG DONGYAN, WANG LIANGJUN, LIU MINGYING
Format Patent
LanguageChinese
English
Published 13.08.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a light-emitting diode and a manufacturing method thereof. The light-emitting diode sequentially comprises a substrate, a buffer layer, an n-type conducting layer, a luminous zone and a p-type conducting layer; the luminous zone is of a multi-quantum well structure, wherein at least one quantum well comprises a well layer of nitride of a family III and a base layer which is based on the nitride of the family III and arranged on the well layer, and the base layer comprises at least one first SiNx insertion layer; the SiNx insertion layer can be used for effectively reducing stress in the base layer, so that the surface on which the luminous zone is grown is smooth, defects are reduced, and the composite efficiency of carriers is improved.
Bibliography:Application Number: CN201410246124