GaAs/AlGaAs半导体异质结结构栅极电控量子点的制备方法及其测量方法

本发明公开了种GaAs/AlGaAs半导体异质结结构栅极电控量子点的制备方法，所述方法包括以下步骤：a.基片生长步骤；b.基片预处理步骤；c.量子点的制备步骤；和d.量子点样品的分块封装步骤。 The invention discloses a preparation method and measurement method for grid electronic control quantum dots of a GaAs/AlGaAs semiconductor heterojunction structure. The method comprises the following st...

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Bibliographic Details
Format Patent
LanguageChinese
Published 17.08.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:本发明公开了种GaAs/AlGaAs半导体异质结结构栅极电控量子点的制备方法，所述方法包括以下步骤：a.基片生长步骤；b.基片预处理步骤；c.量子点的制备步骤；和d.量子点样品的分块封装步骤。 The invention discloses a preparation method and measurement method for grid electronic control quantum dots of a GaAs/AlGaAs semiconductor heterojunction structure. The method comprises the following steps of the substrate growing step, the substrate pre-processing step, the quantum dot preparation step and the block encapsulation step of a quantum dot sample.
Bibliography:Application Number: CN201410229185