High-brightness LED with surface microstructure and manufacturing and screening method thereof

• Main Authors: LU YIAN, WU JUNYI, WANG DUXIANG, TAO QINGSHAN, CAI KUNHUANG, WU CHAOYU
• Format: Patent
• Language: Chinese; English
• Published: 18.06.2014
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a high-brightness LED with a surface microstructure and a manufacturing and screening method of the high-brightness LED. The surface microstructure is characterized in that the ratio of the roughened total surface area of a light emitting surface of the LED to the vertical projection area of the light emitting surface of the LED is larger than 1.5, and the peak density on the light emitting surface is larger than or equal to 0.3/micron . The larger the ratio of the roughened total surface area of an epitaxial wafer to the vertical projection area of the epitaxial wafer is, the more conveniently the light taking-out efficiency of the epitaxial wafer can be improved; the more the number of peaks with the height larger than a critical height in the unit area is, the more conveniently the light taking-out efficiency of the epitaxial wafer can be improved, and the light taking-out efficiency of the epitaxial wafer is greatly improved.