On-chip decoupling capacitor, integrated chip, and method of manufacturing same

The present invention relates to an on-chip decoupling capacitor, an integrated chip, and a method of manufacturing the same. An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more c...

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Bibliographic Details
Main Authors AARON D. FRANKLIN, DAMON B. FARMER, GEORGE S. TULEVSKI, SHU-JEN HAN
Format Patent
LanguageChinese
English
Published 11.06.2014
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to an on-chip decoupling capacitor, an integrated chip, and a method of manufacturing the same. An on-chip decoupling capacitor is disclosed. One or more carbon nanotubes are coupled to a first electrode of the capacitor. A dielectric skin is formed on the one or more carbon nanotubes. A metal coating is formed on the dielectric skin. The dielectric skin is configured to electrically isolate the one or more carbon nanotubes from the metal coating.
Bibliography:Application Number: CN201310594462